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Boron-doped diamond films on silicon studied by Raman and infrared spectroscopiesFormat | Member Price | Non-Member Price |
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Paper Abstract
Boron doped diamond films were deposited onto (100) orientated Si
substrates using a thermal filament CVD method. Boron trioxide was
used as a doping source and samples with boron to carbon (B/C)
ratios of 0, 10, 100, and 1000 ppm were prepared for the optical
measurements. The infrared (IR) results reveal the formation of an
ultrathin SiC layer at the interface between Si and diamond.
Furthermore, the IR data confirm the resistivity data obtained
from electrical measurements. Raman spectroscopy was used to probe
the quality and homogeneity of the diamond films. Upon increasing
B/C ratio the diamond phonon line shifts to lower frequency and is
also broadened revealing a softening of the diamond. In addition,
the optical absorption was found to increase strongly with
increasing B/c ratio.
Paper Details
Date Published: 1 August 1990
PDF: 11 pages
Proc. SPIE 1275, Hard Materials in Optics, (1 August 1990); doi: 10.1117/12.20513
Published in SPIE Proceedings Vol. 1275:
Hard Materials in Optics
Carl-Gustaf Ribbing, Editor(s)
PDF: 11 pages
Proc. SPIE 1275, Hard Materials in Optics, (1 August 1990); doi: 10.1117/12.20513
Show Author Affiliations
Ken Okano, Tokai Univ. (Japan)
Tateki Kurosu, Tokai Univ. (Japan)
Masamori Iida, Tokai Univ. (Japan)
Tateki Kurosu, Tokai Univ. (Japan)
Masamori Iida, Tokai Univ. (Japan)
Thomas Eickhoff, RWTH Aachen (Germany)
Hans Wilhelm, Technische Univ. Berlin (Germany)
Dietrich R. T. Zahn, Technische Univ. Berlin (Germany)
Hans Wilhelm, Technische Univ. Berlin (Germany)
Dietrich R. T. Zahn, Technische Univ. Berlin (Germany)
Published in SPIE Proceedings Vol. 1275:
Hard Materials in Optics
Carl-Gustaf Ribbing, Editor(s)
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