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Proceedings Paper

Characterization of an ADP electro-optic modulator in the near-IR
Author(s): Indu F. Saxena; Roy B. Torbert; James C. Vandiver
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Paper Abstract

Electro-optic modulators (EOM's) can be used for polarization modulation of light at frequencies up to hundreds of megahertz and are therefore strong candidates for high speed effipsometer systems. The characteristic of this device is the half wave voltage, V ,which is a function of the wavelength of light and the temperature. A description of the particular ADP EOM we are using, and a discussion of the effect of laser linewidth and temperature on the measurement of V,, is presented. For the laser diode wavelength of )t = 830 nm, V, and the extinction ratio are measured at different temperatures.

Paper Details

Date Published: 1 August 1990
PDF: 9 pages
Proc. SPIE 1274, Electro-Optic and Magneto-Optic Materials II, (1 August 1990); doi: 10.1117/12.20510
Show Author Affiliations
Indu F. Saxena, Univ. of Alabama in Huntsville (United States)
Roy B. Torbert, Univ. of Alabama in Huntsville (United States)
James C. Vandiver, Univ. of Alabama in Huntsville (United States)


Published in SPIE Proceedings Vol. 1274:
Electro-Optic and Magneto-Optic Materials II
Hans Dammann, Editor(s)

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