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Proceedings Paper

Effects of radiation and temperature on gallium nitride (GaN) metal-semiconductor-metal ultraviolet photodetectors
Author(s): Heather C. Chiamori; Chetan Angadi; Ateeq Suria; Ashwin Shankar; Minmin Hou; Sharmila Bhattacharya; Debbie G. Senesky
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Paper Abstract

The development of radiation-hardened, temperature-tolerant materials, sensors and electronics will enable lightweight space sub-systems (reduced packaging requirements) with increased operation lifetimes in extreme harsh environments such as those encountered during space exploration. Gallium nitride (GaN) is a ceramic, semiconductor material stable within high-radiation, high-temperature and chemically corrosive environments due to its wide bandgap (3.4 eV). These material properties can be leveraged for ultraviolet (UV) wavelength photodetection. In this paper, current results of GaN metal-semiconductor-metal (MSM) UV photodetectors behavior after irradiation up to 50 krad and temperatures of 15°C to 150°C is presented. These initial results indicate that GaN-based sensors can provide robust operation within extreme harsh environments. Future directions for GaN-based photodetector technology for down-hole, automotive and space exploration applications are also discussed.

Paper Details

Date Published: 5 June 2014
PDF: 7 pages
Proc. SPIE 9113, Sensors for Extreme Harsh Environments, 911304 (5 June 2014); doi: 10.1117/12.2050983
Show Author Affiliations
Heather C. Chiamori, Stanford Univ. (United States)
Chetan Angadi, NASA Ames Research Ctr. (United States)
Ateeq Suria, Stanford Univ. (United States)
Ashwin Shankar, Stanford Univ. (United States)
Minmin Hou, Stanford Univ. (United States)
Sharmila Bhattacharya, NASA Ames Research Ctr. (United States)
Debbie G. Senesky, Stanford Univ. (United States)


Published in SPIE Proceedings Vol. 9113:
Sensors for Extreme Harsh Environments
Debbie G. Senesky; Sachin Dekate, Editor(s)

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