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Proceedings Paper

At-wavelength observation of phase defect using focused lensless microscope
Author(s): Tetsuo Harada; Yusuke Tanaka; Tsuyoshi Amano; Youichi Usui; Takeo Watanabe; Hiroo Kinoshita
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Paper Abstract

To evaluate defects on extreme ultraviolet (EUV) masks at the blank state of manufacturing, we developed a micro coherent EUV scatterometry microscope (micro-CSM). The illumination source is coherent EUV light with a 230-nm focus diameter on the defect using a Fresnel zoneplate. This system directly observes the reflection and scattering signals from a phase defect. The scattering distributions of 30-nm-wide defects were anisotropic due to interference with speckle from multilayer scattering. Thus, printability of the defects would depend on the defect position in the multilayer.

Paper Details

Date Published: 17 April 2014
PDF: 8 pages
Proc. SPIE 9048, Extreme Ultraviolet (EUV) Lithography V, 90483F (17 April 2014); doi: 10.1117/12.2050936
Show Author Affiliations
Tetsuo Harada, Univ. of Hyogo (Japan)
Yusuke Tanaka, Univ. of Hyogo (Japan)
Tsuyoshi Amano, EUVL Infrastructure Development Ctr., Inc. (Japan)
Youichi Usui, EUVL Infrastructure Development Ctr., Inc. (Japan)
Takeo Watanabe, Univ. of Hyogo (Japan)
Hiroo Kinoshita, Univ. of Hyogo (Japan)


Published in SPIE Proceedings Vol. 9048:
Extreme Ultraviolet (EUV) Lithography V
Obert R. Wood; Eric M. Panning, Editor(s)

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