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Proceedings Paper

High temperature SiC pressure sensors with low offset voltage shift
Author(s): Robert S. Okojie; Dorothy Lukco; Vu Nguyen; Ender Savrun
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Paper Abstract

Very low (~0.125 mV) shifts in offset voltage were achieved in silicon carbide (SiC) piezoresistive pressure sensors during thermal cycling between 25 and 500 °C for 500 hours. It resulted in reduced measurement error to ~ 0.36 % and ~ 0.9 % of the full-scale output at 25 and 500 °C, respectively. The reduction in the offset shift was the result of the advancement made in controlling the intermetallic diffusion and microstructural phase changes within the contact metallization. The low offset voltage results provide critical figures of merit needed for quantifying the measurement error and correction when the SiC pressure sensors are used. The results demonstrate more robust and reliable SiC pressure sensors operating with significantly reduced FSO errors at 500 °C.

Paper Details

Date Published: 5 June 2014
PDF: 6 pages
Proc. SPIE 9113, Sensors for Extreme Harsh Environments, 911308 (5 June 2014); doi: 10.1117/12.2050812
Show Author Affiliations
Robert S. Okojie, NASA Glenn Research Ctr. (United States)
Dorothy Lukco, Vantage Partners, LLC (United States)
NASA Glenn Research Ctr. (United States)
Vu Nguyen, Sienna Technologies, Inc. (United States)
Ender Savrun, Sienna Technologies, Inc. (United States)


Published in SPIE Proceedings Vol. 9113:
Sensors for Extreme Harsh Environments
Debbie G. Senesky; Sachin Dekate, Editor(s)

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