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Paper Abstract

Interest in array based imaging of terahertz energy (T-Rays) has gained traction lately, specifically using a CMOS process due to its ease of manufacturability and the use of MOSFETs as a detection mechanism. Incident terahertz radiation on to the gate channel region of a MOSFET can be related to plasmonic response waves which change the electron density and potential across the channel. The 0.35 μm silicon CMOS MOSFETs tested in this work contain varying structures, providing a range of detectors to analyze. Included are individual test transistors for which various operating parameters and modes are studied and results presented. A focus on single transistor-antenna testing provides a path for discovering the most efficient combination for coupling 0.2 THz band energy. An evaluation of fabricated terahertz band test detection MOSFETs is conducted. Sensitivity analysis and responsivity are described, in parallel with theoretical expectations of the plasmonic response in room temperature conditions. A maximum responsivity of 40 000 V/W and corresponding NEP of 10 pW/Hz1/2 (±10% uncertainty) is achieved.

Paper Details

Date Published: 21 May 2014
PDF: 11 pages
Proc. SPIE 9102, Terahertz Physics, Devices, and Systems VIII: Advanced Applications in Industry and Defense, 91020P (21 May 2014); doi: 10.1117/12.2050754
Show Author Affiliations
Gregory J. Fertig, Rochester Institute of Technology (United States)
Zoran Ninkov, Rochester Institute of Technology (United States)
Mark F. Bocko, Univ. of Rochester (United States)
Jagannath Dayalu, Univ. of Rochester (United States)
Kenny D. Fourspring, Exelis Geospatial Systems (United States)
Zeljko Ignjatovic, Univ. of Rochester (United States)
Paul P. K. Lee, Univ. of Rochester (United States)
Exelis Geospatial Systems (United States)
Craig W. McMurtry, Univ. of Rochester (United States)
J. Daniel Newman, Exelis Geospatial Systems (United States)
Judith L. Pipher, Univ. of Rochester (United States)
Andrew P. Sacco, Exelis Geospatial Systems (United States)
Chao Zhang, Rochester Institute of Technology (United States)

Published in SPIE Proceedings Vol. 9102:
Terahertz Physics, Devices, and Systems VIII: Advanced Applications in Industry and Defense
Mehdi F. Anwar; Thomas W. Crowe; Tariq Manzur, Editor(s)

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