Share Email Print

Proceedings Paper

Defect-related dark currents in III-V MWIR nBn detectors
Author(s): G. R. Savich; D. E. Sidor; X. Du; M. Jain; C. P. Morath; V. M. Cowan; J. K. Kim; J. F. Klem; D. Leonhardt; S. D. Hawkins; T. R. Fortune; A. Tauke-Pedretti; G. W. Wicks
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

The effect of defects on the dark current characteristics of MWIR, III-V nBn detectors has been studied. Two different types of defects are compared, those produced by lattice mismatch and by proton irradiation. It is shown that the introduction of defects always elevates dark currents; however the effect on dark current is different for nBn detectors and conventional photodiodes. The dark currents of nBn detectors are found to be more tolerant of defects compared to pn-junction based devices. Defects more weakly increase dark currents, and cooling reduces the defect-produced dark currents more rapidly in nBn detectors than in conventional photodiodes.

Paper Details

Date Published: 24 June 2014
PDF: 6 pages
Proc. SPIE 9070, Infrared Technology and Applications XL, 907011 (24 June 2014); doi: 10.1117/12.2050535
Show Author Affiliations
G. R. Savich, Univ. of Rochester (United States)
D. E. Sidor, Univ. of Rochester (United States)
X. Du, Univ. of Rochester (United States)
M. Jain, Univ. of Rochester (United States)
C. P. Morath, Air Force Research Lab. (United States)
V. M. Cowan, Air Force Research Lab. (United States)
J. K. Kim, Sandia National Labs. (United States)
J. F. Klem, Sandia National Labs. (United States)
D. Leonhardt, Sandia National Labs. (United States)
S. D. Hawkins, Sandia National Labs. (United States)
T. R. Fortune, Sandia National Labs. (United States)
A. Tauke-Pedretti, Sandia National Labs. (United States)
G. W. Wicks, Univ. of Rochester (United States)

Published in SPIE Proceedings Vol. 9070:
Infrared Technology and Applications XL
Bjørn F. Andresen; Gabor F. Fulop; Charles M. Hanson; Paul R. Norton, Editor(s)

© SPIE. Terms of Use
Back to Top