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Proceedings Paper

Silicon carbide solid-state photomultiplier for UV light detection
Author(s): Stanislav Soloviev; Sergei Dolinsky; Sabarni Palit; Xingguang Zhu; Peter Sandvik
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Paper Abstract

A Silicon Carbide Solid-State Photomultiplier (SiC-PM) was designed, fabricated and characterized for the first time. A die size of 3x3 mm2 has a 2x2 mm2 pixelated photosensitive area on it. The pixelated area consists of 16 sub-arrays of 0.5x0.5 mm2 with 64 pixels (60 μm pitch) in each sub-array. Each individual pixel has an integrated quenching resistor made of poly-silicon. Optical measurements of the SiC-PM were performed using fast UV LED with a wavelength of 300 nm demonstrating Geiger mode operation. Output signal waveforms measured at temperatures from 20°C to 200°C indicated temperature dependent time constants. The discrete nature of output signals indicated the capability of the SiC-PM to detect single photons from a faint UV light flux.

Paper Details

Date Published: 5 June 2014
PDF: 8 pages
Proc. SPIE 9113, Sensors for Extreme Harsh Environments, 911305 (5 June 2014); doi: 10.1117/12.2050476
Show Author Affiliations
Stanislav Soloviev, GE Global Research (United States)
Sergei Dolinsky, GE Global Research (United States)
Sabarni Palit, GE Global Research (United States)
Xingguang Zhu, GE Global Research (United States)
Peter Sandvik, GE Global Research (United States)


Published in SPIE Proceedings Vol. 9113:
Sensors for Extreme Harsh Environments
Debbie G. Senesky; Sachin Dekate, Editor(s)

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