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Proceedings Paper

Comparison of the electro-optical performances of MWIR InAs/GaSb superlattice pin photodiode and FPA with asymmetrical designs
Author(s): Edouard Giard; Rachid Taalat; Marie Delmas; Jean-Baptiste Rodriguez; Philippe Christol; Julien Jaeck; Isabelle Ribet-Mohamed
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Paper Abstract

We first present an electro-optical characterization of the radiometric performances of a type-II InAs/GaSb superlattice (T2SL) pin photodiode operating in the mid-wavelength infrared domain. This photodiode was grown with an InAs-rich structure. We focused our attention on quantum efficiency and responsivity: quantum efficiency of mono-pixel device reaches 23% at λ = 2.1 μm for 1 μm thick SL structure and 77K operating temperature. Then we measured the angular response of this photodiode: the response of the photodiode doesn’t depend on the angle of incidence of the flux. We also report the QE of 2μm-thick InAs-rich T2SL pin 320×256 pixels focal plane array, which reaches 61% at λ = 2.6 μm.

Paper Details

Date Published: 24 June 2014
PDF: 9 pages
Proc. SPIE 9070, Infrared Technology and Applications XL, 90700W (24 June 2014); doi: 10.1117/12.2050426
Show Author Affiliations
Edouard Giard, ONERA/DOTA (France)
Rachid Taalat, Institut d’Electronique du Sud, CNRS, Univ. Montpellier 2 (France)
Marie Delmas, Institut d’Electronique du Sud, CNRS, Univ. Montpellier 2 (France)
Jean-Baptiste Rodriguez, Institut d’Electronique du Sud, CNRS, Univ. Montpellier 2 (France)
Philippe Christol, Institut d’Electronique du Sud, CNRS, Univ. Montpellier 2 (France)
Julien Jaeck, ONERA/DOTA (France)
Isabelle Ribet-Mohamed, ONERA/DOTA (France)

Published in SPIE Proceedings Vol. 9070:
Infrared Technology and Applications XL
Bjørn F. Andresen; Gabor F. Fulop; Charles M. Hanson; Paul R. Norton, Editor(s)

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