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Proceedings Paper

Double graphene-layer structures for adaptive devices
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Paper Abstract

Among different carbon materials (diamond, graphite, fullerene, carbon nanotubes), graphene and more complex graphene-based structures attracted a considerable attention. The gapless energy spectrum of graphene implies that graphene can absorb and emit photons with rather low energies corresponding to terahertz (THz) and infrared (IR) ranges of the electromagnetic spectrum. In this presentation, the discussion is focused on the double-graphene-layer (double-GL) structures. In these structures, GLs are separated by a barrier layer (Boron Nitride, Silicon Carbide, and so on). Applying voltage between GLs, one can realize the situation when one GL is filled with electrons while the other is filled with holes. The variation of the applied voltage leads to the variations of the Fermi energies and, hence, to the change of the interband and intraband absorption of electromagnetic radiation and to the variation of the tunneling current. The plasma oscillations in double-GL structures exhibit interesting features. This is mainly because each GL serves as the gate for the other GL. The spectrum of the plasma oscillations in the double-GL structures falls into the terahertz range (THz) of frequencies and can be effectively controlled by the bias voltage. In this paper, we discuss the effects of the excitation of the plasma oscillations by incoming THz radiation and by optical radiation of two lasers with close frequencies as well as negative differential conductivity of the N-type and Z-type. These effects can be used in resonant THz detectors and THz photomixers. The models of devices based on double-GL structures as well as their characteristics are discussed.

Paper Details

Date Published: 4 June 2014
PDF: 12 pages
Proc. SPIE 9083, Micro- and Nanotechnology Sensors, Systems, and Applications VI, 90830A (4 June 2014); doi: 10.1117/12.2050218
Show Author Affiliations
V. Mitin, Univ. at Buffalo (United States)
V. Ryzhii, Tohoku Univ. (Japan)
T. Otsuji, Tohoku Univ. (Japan)
M. Ryzhii, Univ. of Aizu (Japan)
M. S. Shur, Rensselaer Polytechnic Institute (United States)

Published in SPIE Proceedings Vol. 9083:
Micro- and Nanotechnology Sensors, Systems, and Applications VI
Thomas George; M. Saif Islam; Achyut K. Dutta, Editor(s)

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