Share Email Print
cover

Proceedings Paper

Mercury cadmium telluride implanted junction profile measurement and depth control
Author(s): Songmin Zhou; Chun Lin; Haibin Li; Yanfeng Wei; Zhenhua Ye; Ruijun Ding; Li He
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

In this work, a novel junction profile measurement method is proposed. A serial of junctions were fabricated by B+ implantation. Then a beveled bar which was about 10mm long and several micrometers deep was formed by carefully controlled wet-etching. The remaining depth of n region changes from the full depth that is about 5.3mm after ion implantation to zero depending on its lateral position and the slope of the etching bar. Voltage-current and Laser Beam Induced Current (LBIC) measurements were applied to determine the HgCdTe junction edge. The LBIC signal orrectification characteristic indicates the existence of a PN junction. The junction depth is extracted from the position where the PN junction disappears and the slope of the etching bar. The junction depth of intrinsic doped HgCdTe was measured, which is about 2.4μm. A significant 0.4mm thick N-region was observed. Moreover, junction depths of samples annealed for different time were also investigated. By this method, it’s possible to measure the three dimensional profile of a planar PN junction.

Paper Details

Date Published: 24 June 2014
PDF: 7 pages
Proc. SPIE 9070, Infrared Technology and Applications XL, 907031 (24 June 2014); doi: 10.1117/12.2050100
Show Author Affiliations
Songmin Zhou, Shanghai Institute of Technical Physics (China)
Chun Lin, Shanghai Institute of Technical Physics (China)
Haibin Li, Shanghai Institute of Technical Physics (China)
Yanfeng Wei, Shanghai Institute of Technical Physics (China)
Zhenhua Ye, Shanghai Institute of Technical Physics (China)
Ruijun Ding, Shanghai Institute of Technical Physics (China)
Li He, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 9070:
Infrared Technology and Applications XL
Bjørn F. Andresen; Gabor F. Fulop; Charles M. Hanson; Paul R. Norton, Editor(s)

© SPIE. Terms of Use
Back to Top