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Proceedings Paper

Interferometric phase shift technique for high-resolution deep-UV microlithography
Author(s): Frank K. Tittel; Joseph R. Cavallaro; Motoi Kido; Michael C. Smayling; Gabor Szabo; William L. Wilson
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Paper Abstract

A new phase shifting technique based on interferometry has been developed which is especially suited for deep-UV microlithography. Using only a single layer chromium mask, with no additional phase shift elements, significant resolution and contrast enhancement over conventional transmission lithography can be achieved. Both computer simulations, as well as experiments using a CCD camera and UV photoresist confirm the capabilities of this new approach. Using a relatively simple experimental setup and an illumination wavelength of 355 nm, lines with feature sizes as fine as 0.3 micrometers were achieved.

Paper Details

Date Published: 31 March 1995
PDF: 8 pages
Proc. SPIE 2502, Gas Flow and Chemical Lasers: Tenth International Symposium, (31 March 1995); doi: 10.1117/12.204981
Show Author Affiliations
Frank K. Tittel, Rice Univ. (United States)
Joseph R. Cavallaro, Rice Univ. (United States)
Motoi Kido, Nippon Steel Corp. (Japan)
Michael C. Smayling, Texas Instruments Inc. (United States)
Gabor Szabo, Jate Univ. (Hungary)
William L. Wilson, Rice Univ. (United States)

Published in SPIE Proceedings Vol. 2502:
Gas Flow and Chemical Lasers: Tenth International Symposium
Willy L. Bohn; Helmut Huegel, Editor(s)

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