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Proceedings Paper

Si supply mechanism and simulation of composition profiles in excimer laser implant-deposition of stainless steel
Author(s): Masayuki Jyumonji; Koji Sugioka; Hiroshi Takai; Hideo Tashiro; Koichi Toyoda
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Paper Abstract

Simultaneous doping and deposition of Si onto stainless steel 304 by irradiation of KrF excimer laser beams in an ambient SiH4 gas is demonstrated. The specific process is referred to as laser implant-deposition (LID). Dependence of the total quantities of supplied Si atoms (dose) on the experimental conditions is examined to analyze the LID mechanism. The Si depth profiles in the LID samples are simulated by a liquid phase diffusion model, which show good agreement with the experimental results.

Paper Details

Date Published: 31 March 1995
PDF: 5 pages
Proc. SPIE 2502, Gas Flow and Chemical Lasers: Tenth International Symposium, (31 March 1995); doi: 10.1117/12.204979
Show Author Affiliations
Masayuki Jyumonji, Tokyo Denki Univ. (Japan)
Koji Sugioka, RIKEN-The Institute of Physical and Chemical Research (Japan)
Hiroshi Takai, Tokyo Denki Univ. (Japan)
Hideo Tashiro, RIKEN-The Institute of Physical and Chemical Research (Japan)
Koichi Toyoda, RIKEN-The Institute of Physical and Chemical Research (Japan)


Published in SPIE Proceedings Vol. 2502:
Gas Flow and Chemical Lasers: Tenth International Symposium
Willy L. Bohn; Helmut Huegel, Editor(s)

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