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Proceedings Paper

Influence of ion implantation on the optical properties of magnetic garnet films
Author(s): G. Schueer; D. Kollewe; Horst Doetsch; A. Brockmeyer
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Paper Abstract

Films of yttrium iron garnet, grown by liquid phase epitaxy on [111] oriented gadolinium gallium garnet substrates, are implanted by argon ions at energies of 2.8 and 3.4 MeV and at doses varying from 1012 to 1014 cm2 At these implantation energies the penetration depths of the ions lie at 1 .0 and 1 .4 m, respectively. The implantation induces an increase of the effective mode indices ranging up to 1.7 . 10_2. These changes are equal for TE and TM modes; therefore the induced index variation is isotropic. The refractive index is considered to consist of the original step index superimposed by a Gaussian proffle in order to determine its spatial variation. For this composite proffle the differential equations for TE and TM modes are solved numerically yielding the effective indices of these modes. The height, width and location of the Gaussian profile are then fitted to the experimental values. The location of the maximum of the Gaussian profile agrees well with the penetration depth of the ions. The width of the induced profile is about 1um. The determined profile is verified by removing the garnet film in small steps using a polishing process. On the other hand, the optical damping is increased considerably by ion implantation. However, most of the additional damping can be removed by proper annealing technique without destroying the implantation induced profile of the refractive index.

Paper Details

Date Published: 1 August 1990
PDF: 7 pages
Proc. SPIE 1274, Electro-Optic and Magneto-Optic Materials II, (1 August 1990); doi: 10.1117/12.20495
Show Author Affiliations
G. Schueer, Univ. Osnabrueck (Germany)
D. Kollewe, Univ. Osnabrueck (Germany)
Horst Doetsch, Univ. Osnabrueck (Germany)
A. Brockmeyer, Univ. Osnabrueck (Germany)


Published in SPIE Proceedings Vol. 1274:
Electro-Optic and Magneto-Optic Materials II
Hans Dammann, Editor(s)

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