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Proceedings Paper • Open Access

Light-induced electrical switching of porphyrin-covered silicon nanowire FETs (presentation video)

Paper Abstract

Nanowires represent excellent building blocks for future nanoelectronics, due to their efficient charge transport characteristics. Here we present light-induced switching behaviour of porphyrin-coated silicon nanowire field effect transistors (Si NW FETs) and demonstrate their capabilities for design of hybrid nanodevices – consisting of organic complexes and inorganic nanowires. Switching of Si NW FETs highly reflects the electrical change of porphyrin molecules by light. To demonstrate significant factors of concentration-dependent switching of porphyrin-covered devices, electrical charging mechanism through molecules and nanowires has been understood, that allows the systematic integration of the hybrid devices.

Paper Details

Date Published: 8 May 2014
PDF: 1 pages
Proc. SPIE 9055, Bioinspiration, Biomimetics, and Bioreplication 2014, 90550X (8 May 2014); doi: 10.1117/12.2049218
Show Author Affiliations
Gianaurelio Cuniberti, Technische Univ. Dresden (Germany)


Published in SPIE Proceedings Vol. 9055:
Bioinspiration, Biomimetics, and Bioreplication 2014
Akhlesh Lakhtakia, Editor(s)

Video Presentation

Light-induced-electrical-switching-of-porphyrin-covered-silicon-nanowire-FETs



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