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Proceedings Paper

Rate equation analysis of longitudinal spatial hole burning in high-power semiconductor lasers
Author(s): Ting Hao; Junyeob Song; Paul O. Leisher
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Paper Abstract

For high-power semiconductor lasers, asymmetric reflectivities of facets are employed in order to improve slope efficiency. Cavity lengths of these laser diodes have been increased to better distribute heat in order to improve output power. However, these two methods result in an inhomogeneous longitudinal profile of photon density, which leads to a nonuniform gain profile and is typically referred to as longitudinal spatial hole burning (LSHB). In this work, we developed a model to self-consistently calculate the longitudinal photon density distribution, carrier density distribution, and gain distribution in a high-power semiconductor laser. The calculation is based on modified rate equations, and a finite difference method is used to solve the differential equations. Newton’s method is employed to obtain final results with residual error below 10-6. The impact of LSHB was analyzed with different parameters, and we demonstrate that LSHB is expected to limit the maximum achievable output power of semiconductor lasers having cavity lengths in excess of several mm. The results are expected to be useful in the optimization of high-power semiconductor laser designs.

Paper Details

Date Published: 2 May 2014
PDF: 7 pages
Proc. SPIE 9134, Semiconductor Lasers and Laser Dynamics VI, 91340S (2 May 2014); doi: 10.1117/12.2048908
Show Author Affiliations
Ting Hao, Rose-Hulman Institute of Technology (United States)
Junyeob Song, Rose-Hulman Institute of Technology (United States)
Paul O. Leisher, Rose-Hulman Institute of Technology (United States)


Published in SPIE Proceedings Vol. 9134:
Semiconductor Lasers and Laser Dynamics VI
Krassimir Panajotov; Marc Sciamanna; Angel Valle; Rainer Michalzik, Editor(s)

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