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Proceedings Paper

The effect of surface treatment on electrical and photoelectrical properies of anisotype heterojunctions n-TiN/p-Si
Author(s): M. N. Solovan; V. V. Brus; P. D. Maryanchuk
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Paper Abstract

We report the results of the investigation of electrical properties of photosensitive anisotype heterojunctions n- TiN/p-Si with different conditions of Si surface treatments. The analysis of the measured I-V characteristics of the heterojunctions under dark conditions has shown that values of the height of the potential barrier and series resistance decreases with the decrease of the thickness of native oxide. The dominating tunnel-recombination mechanism of current transport through the heterojunctions under investigation was determined to be independent on the conditions of surface treatment. We have established that the n-TiN/p-Si heterojunction oxidized in bidistilled water at 70ºC for 30 s possesses the lowest density of interface states and, thus lowest surface recombination velocity.

Paper Details

Date Published: 17 December 2013
PDF: 8 pages
Proc. SPIE 9066, Eleventh International Conference on Correlation Optics, 906614 (17 December 2013); doi: 10.1117/12.2048631
Show Author Affiliations
M. N. Solovan, Yuriy Fedkovych Chernivtsi National Univ. (Ukraine)
V. V. Brus, Yuriy Fedkovych Chernivtsi National Univ. (Ukraine)
P. D. Maryanchuk, Yuriy Fedkovych Chernivtsi National Univ. (Ukraine)


Published in SPIE Proceedings Vol. 9066:
Eleventh International Conference on Correlation Optics
Oleg Vyacheslavovich Angelsky, Editor(s)

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