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Proceedings Paper

Extended wavelength InGaAs infrared detector arrays based on three types of material structures grown by MBE
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Paper Abstract

Extended wavelength InGaAs infrared detector arrays in 1.0~2.5μm spectral rang based on three types of material structures grown by MBE were studied. The first type InGaAs detectors, marked by sample 1#, were fabricated using Pi- N epitaxial materials, mesa etching technique, side-wall and surface passivating film. The second type InGaAs detectors, marked by sample 2#, were fabricated using N-i-P epitaxial materials, mesa etching technique, side-wall and surface passivating film. The third type InGaAs detectors, marked by sample 3#, were fabricated using n-i-n epitaxial materials, planar diffusion process and surface passivating coating. I-V curves, low frequency noise and response spectra of these detectors were measured at the different temperature. The response spectra of these detectors cover 1.0~2.5μm wavelength range. The dark current density of three types InGaAs detectors are 28nA/cm2, 2μA/cm2, 9μA/cm2 at 200K and -10mV bias voltage, respectively. Compared to Sample 2# and Sample 3#, sample 1# presents the lower dark current at the same temperature and the same bias voltage, which mainly results in the improvement of surface passivation film and the depth of mesa etching. The frequency spectrum of the noise of sample 1# has an inflection point at about 10Hz frequency, 1/f noise play an obviously role in the detectors below the 10Hz frequency.

Paper Details

Date Published: 24 June 2014
PDF: 5 pages
Proc. SPIE 9070, Infrared Technology and Applications XL, 90700C (24 June 2014); doi: 10.1117/12.2048583
Show Author Affiliations
Haimei Gong, Shanghai Institute of Technical Physics (China)
Xue Li, Shanghai Institute of Technical Physics (China)
Tao Li, Shanghai Institute of Technical Physics (China)
Hengjing Tang, Shanghai Institute of Technical Physics (China)
Ming Shi, Shanghai Institute of Technical Physics (China)
Xiumei Shao, Shanghai Institute of Technical Physics (China)
Yonggang Zhang, Shanghai Institute of Microsystem and Information Technology (China)


Published in SPIE Proceedings Vol. 9070:
Infrared Technology and Applications XL
Bjørn F. Andresen; Gabor F. Fulop; Charles M. Hanson; Paul R. Norton, Editor(s)

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