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Proceedings Paper

Driving the industry towards a consensus on high numerical aperture (high-NA) extreme ultraviolet (EUV)
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Paper Abstract

High numerical aperture (high-NA) extreme ultraviolet (EUV) is one option to enable a higher resolution than EUV can achieve with single patterning. An industry effort to achieve consensus on the key parameters of high-NA EUV is described. At high-NA, three-dimensional (3D) mask effects cause a loss of contrast in the image that is recovered by increasing the scanner de-magnification. This leads to a tradeoff between wafer field and mask size that has considerable impact on mask cost and scanner cost of ownership.

Paper Details

Date Published: 17 April 2014
PDF: 9 pages
Proc. SPIE 9048, Extreme Ultraviolet (EUV) Lithography V, 90481O (17 April 2014); doi: 10.1117/12.2048397
Show Author Affiliations
Patrick A. Kearney, SEMATECH Inc. (United States)
Obert Wood, GLOBALFOUNDRIES Inc. (United States)
Eric Hendrickx, IMEC (Belgium)
Greg McIntyre, IBM Microelectronics (United States)
Soichi Inoue, EUVL Infrastructure Development Ctr., Inc. (Japan)
Frank Goodwin, SEMATECH Inc. (United States)
Stefan Wurm, SEMATECH Inc. (United States)
Jan van Schoot, ASML Netherlands B.V. (Netherlands)
Winfried Kaiser, Carl Zeiss SMT GmbH (Germany)

Published in SPIE Proceedings Vol. 9048:
Extreme Ultraviolet (EUV) Lithography V
Obert R. Wood; Eric M. Panning, Editor(s)

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