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Proceedings Paper

Dual frequency mid-gap capacitively coupled plasma (m-CCP) for conventional and DSA patterning at 10nm node and beyond
Author(s): Nihar Mohanty; Akiteru Ko; Christopher Cole; Vinayak Rastogi; Kaushik Kumar; Gerard Schmid; Richard Farrell; Todd Ryan; Erik Hosler; Ji Xu; Moshe Preil
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Paper Abstract

In this paper, we demonstrate the unique advantage of dual-frequency mid-gap capacitively coupled plasma (m-CCP) in advanced node patterning process with regard to etch rate / depth uniformity and critical dimension (CD) control in conjunction with wider process window for aspect ratio dependent & microloading effects. Unlike the non-planar plasma sources, the simple design of the mid-gap CCPs enables both metal and non-metal hard-mask based patterning, which provides essential flexibility for conventional and DSA patterning. We present data on both, the conventional multi patterning as well as DSA patterning for trenches / fins and holes. Rigorous CD control and CDU is shown to be crucial for multi patterning as they lead to undesirable odd-even delta and pitch walking. For DSA patterning, co-optimized Ne / Vdc of the dual frequency CCPs would be demonstrated to be advantageous for higher organic-to-organic selectivity during co-polymer etching.

Paper Details

Date Published: 28 March 2014
PDF: 12 pages
Proc. SPIE 9054, Advanced Etch Technology for Nanopatterning III, 90540R (28 March 2014); doi: 10.1117/12.2048320
Show Author Affiliations
Nihar Mohanty, TEL Technology Ctr., America, LLC (United States)
Akiteru Ko, TEL Technology Ctr., America, LLC (United States)
Christopher Cole, TEL Technology Ctr., America, LLC (United States)
Vinayak Rastogi, TEL Technology Ctr., America, LLC (United States)
Kaushik Kumar, TEL Technology Ctr., America, LLC (United States)
Gerard Schmid, GLOBALFOUNDRIES, Inc. (United States)
Richard Farrell, GLOBALFOUNDRIES, Inc. (United States)
Todd Ryan, GLOBALFOUNDRIES, Inc. (United States)
Erik Hosler, GLOBALFOUNDRIES, Inc. (United States)
Ji Xu, GLOBALFOUNDRIES, Inc. (United States)
Moshe Preil, GLOBALFOUNDRIES, Inc. (United States)


Published in SPIE Proceedings Vol. 9054:
Advanced Etch Technology for Nanopatterning III
Gottlieb S. Oehrlein; Qinghuang Lin; Ying Zhang, Editor(s)

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