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Proceedings Paper

EUV overlay strategy for improving MMO
Author(s): Byoung-Hoon Lee; Inhwan Lee; Yoonsuk Hyun; SeoMin Kim; Chang-Moon Lim; Myoung Soo Kim; Sung-ki Park
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Paper Abstract

EUV lithography (EUVL) is the most promising technology to extend the resolution limit, and is expected to be used if the enough source power is delivered and mask defect mitigation method is developed. However, even in that case, the number of EUV steps will be restricted by its high cost, and ArF immersion will still take a major role in the chip manufacturing. Therefore, it is important to check and improve the mix-match overlay (MMO) between EUV and ArF immersion steps. In this paper, we evaluate EUV MMO with ArF immersion system by comparing with dedicated chuck overlay (DCO). The major contributors on MMO are random and field component from overlay analysis. MMO is expected to be below 3nm by applying 18para CPETM(correction per exposure) and RegCTM(Registraion error correction). We consider High oder CPETM need to be developed for further improvement.

Paper Details

Date Published: 17 April 2014
PDF: 8 pages
Proc. SPIE 9048, Extreme Ultraviolet (EUV) Lithography V, 90480R (17 April 2014); doi: 10.1117/12.2048283
Show Author Affiliations
Byoung-Hoon Lee, SK Hynix Semiconductor Inc. (Korea, Republic of)
Inhwan Lee, SK Hynix Semiconductor Inc. (Korea, Republic of)
Yoonsuk Hyun, SK Hynix Semiconductor Inc. (Korea, Republic of)
SeoMin Kim, SK Hynix Semiconductor Inc. (Korea, Republic of)
Chang-Moon Lim, SK Hynix Semiconductor Inc. (Korea, Republic of)
Myoung Soo Kim, SK Hynix Semiconductor Inc. (Korea, Republic of)
Sung-ki Park, SK Hynix Semiconductor Inc. (Korea, Republic of)


Published in SPIE Proceedings Vol. 9048:
Extreme Ultraviolet (EUV) Lithography V
Obert R. Wood; Eric M. Panning, Editor(s)

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