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Proceedings Paper

Optical volumetric inspection of sub-20nm patterned defects with wafer noise
Author(s): Bryan M. Barnes; Francois Goasmat; Martin Y. Sohn; Hui Zhou; András E. Vladár; Richard M. Silver; Abraham Arceo
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Paper Abstract

We have previously introduced a new data analysis method that more thoroughly utilizes scattered optical intensity data collected during defect inspection using bright-field microscopy. This volumetric approach allows conversion of focus resolved 2-D collected images into 3-D volumes of intensity information and also permits the use of multi-dimensional processing and thresholding techniques to enhance defect detectability. In this paper, the effects of wafer noise upon detectability using volumetric processing are assessed with both simulations and experiments using the SEMATECH 9 nm node intentional defect array. The potential extensibility and industrial application of this technique are evaluated.

Paper Details

Date Published: 2 April 2014
PDF: 10 pages
Proc. SPIE 9050, Metrology, Inspection, and Process Control for Microlithography XXVIII, 905016 (2 April 2014); doi: 10.1117/12.2048231
Show Author Affiliations
Bryan M. Barnes, National Institute of Standards and Technology (United States)
Francois Goasmat, National Institute of Standards and Technology (United States)
Martin Y. Sohn, National Institute of Standards and Technology (United States)
Hui Zhou, National Institute of Standards and Technology (United States)
András E. Vladár, National Institute of Standards and Technology (United States)
Richard M. Silver, National Institute of Standards and Technology (United States)
Abraham Arceo, SEMATECH Inc. (United States)


Published in SPIE Proceedings Vol. 9050:
Metrology, Inspection, and Process Control for Microlithography XXVIII
Jason P. Cain; Martha I. Sanchez, Editor(s)

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