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Proceedings Paper

Assessing SEM contour based OPC models quality using rigorous simulation
Author(s): Francois Weisbuch; Aravind Samy Naranaya
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Paper Abstract

OPC model of high quality relies on the accumulation of thousands of CD-SEM measurements with the drawback of long cycle time for data collection. Moreover regular CD measurements are not robust when dealing with critical bi-dimensional structures. In this paper, we propose to use SEM image contours for OPC model calibration and demonstrate the advantage in term of metrology work load. Two set of contours based on resist top and resist bottom measurements are extracted after lithography to generate simultaneously two OPC models. The performances of both models are evaluated with respect to rigorous S-Litho simulations. The model based on the resist bottom is very well matched with the rigorous simulation whereas the model based on resist top is not always following the rigorous simulation. It appears that resist thickness variations on specific hotspots is not compatible with the assumption of a simulated contour located in a single plane in resist.

Paper Details

Date Published: 27 March 2014
PDF: 16 pages
Proc. SPIE 9051, Advances in Patterning Materials and Processes XXXI, 90510A (27 March 2014); doi: 10.1117/12.2047826
Show Author Affiliations
Francois Weisbuch, GLOBALFOUNDRIES Dresden (Germany)
Aravind Samy Naranaya, GLOBALFOUNDRIES Dresden (Germany)


Published in SPIE Proceedings Vol. 9051:
Advances in Patterning Materials and Processes XXXI
Thomas I. Wallow; Christoph K. Hohle, Editor(s)

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