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Proceedings Paper

CD-SEM metrology for sub-10nm width features
Author(s): Benjamin Bunday; Aron Cepler; Aaron Cordes; Abraham Arceo
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Paper Abstract

This paper will explore the possibilities of critical dimension scanning electron microscope (CD-SEM) metrology at sub- 10 nm feature sizes using modeling. JMONSEL simulations will be used to illustrate SEM waveforms for very small features, as a function of beam energy, feature size, profile height and sidewall angle. It will also be shown that the dimensions of the electron beam and interaction volume have very strong influence on the results. Using modeled results, an assessment on required image quality for future tools will be presented, along with a framework for linking spot size and image resolution. Additionally, from the generated waveforms, various measurement algorithms will be evaluated for such future nanometer-scale applications.

Paper Details

Date Published: 2 April 2014
PDF: 20 pages
Proc. SPIE 9050, Metrology, Inspection, and Process Control for Microlithography XXVIII, 90500T (2 April 2014); doi: 10.1117/12.2047099
Show Author Affiliations
Benjamin Bunday, SEMATECH Inc. (United States)
Aron Cepler, SEMATECH Inc. (United States)
Aaron Cordes, SEMATECH Inc. (United States)
Abraham Arceo, SEMATECH Inc. (United States)


Published in SPIE Proceedings Vol. 9050:
Metrology, Inspection, and Process Control for Microlithography XXVIII
Jason P. Cain; Martha I. Sanchez, Editor(s)

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