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Proceedings Paper

Computational lithography platform for 193i-guided directed self-assembly
Author(s): Kafai Lai; Melih Ozlem; Jed W. Pitera; Chi-chun Liu; Anthony Schepis; Daniel Dechene; Azalia Krasnoperova; Daniel Brue; Jassem Abdallah; Hsinyu Tsai; Mike Guillorn; Joy Cheng; Gregory Doerk; Melia Tjio; Rasit Topalogu; Moutaz Fakhry; Neal Lafferty
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Paper Abstract

We continue to study the feasibility of using Directed Self Assembly (DSA) in extending optical lithography for High Volume Manufacturing (HVM). We built test masks based on the mask datatprep flow we proposed in our prior year’s publication [1]. Experimental data on circuit-relevant fin and via patterns based on 193nm graphoepitaxial DSA are demonstrated on 300mm wafers. With this computational lithography (CL) flow we further investigate the basic requirements for full-field capable DSA lithography. The first issue is on DSA-specific defects which can be either random defects due to material properties or the systematic DSA defects that are mainly induced by the variations of the guiding patterns (GP) in 3 dimensions. We focus in studying the latter one. The second issue is the availability of fast DSA models to meet the full-chip capability requirements in different CL component’s need. We further developed different model formulations that constitute the whole spectrum of models in the DSA CL flow. In addition to the Molecular Dynamic/Monte Carlo (MD/MC) model and the compact models we discussed before [2], we implement a 2D phenomenological phase field model by solving the Cahn-Hilliard type of equation that provide a model that is more predictive than compact model but much faster then the physics-based MC model. However simplifying the model might lose the accuracy in prediction especially in the z direction so a critical question emerged: Can a 2D model be useful fro full field? Using 2D and 3D simulations on a few typical constructs we illustrate that a combination of 2D mode with pre-characterized 3D litho metrics might be able to approximate the prediction of 3D models to satisfy the full chip runtime requirement. Finally we conclude with the special attentions we have to pay in the implementation of 193nm based lithography process using DSA.

Paper Details

Date Published: 31 March 2014
PDF: 12 pages
Proc. SPIE 9052, Optical Microlithography XXVII, 90521A (31 March 2014); doi: 10.1117/12.2046920
Show Author Affiliations
Kafai Lai, IBM Corp. (United States)
Melih Ozlem, IBM Corp. (United States)
Jed W. Pitera, IBM Research - Almaden (United States)
Chi-chun Liu, IBM Corp. (United States)
Anthony Schepis, IBM Corp. (United States)
Daniel Dechene, IBM Corp. (United States)
Azalia Krasnoperova, IBM Corp. (United States)
Daniel Brue, IBM Corp. (United States)
Jassem Abdallah, IBM Corp. (United States)
Hsinyu Tsai, IBM Thomas J. Watson Research Ctr. (United States)
Mike Guillorn, IBM Thomas J. Watson Research Ctr. (United States)
Joy Cheng, IBM Research - Almaden (United States)
Gregory Doerk, IBM Research - Almaden (United States)
Melia Tjio, IBM Research - Almaden (United States)
Rasit Topalogu, IBM Corp. (United States)
Moutaz Fakhry, IBM Corp. (United States)
Neal Lafferty, IBM Corp. (United States)

Published in SPIE Proceedings Vol. 9052:
Optical Microlithography XXVII
Kafai Lai; Andreas Erdmann, Editor(s)

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