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Proceedings Paper

Addressing FinFET metrology challenges in 1X node using tilt-beam CD-SEM
Author(s): Xiaoxiao Zhang; Hua Zhou; Zhenhua Ge; Alok Vaid; Deepasree Konduparthi; Carmen Osorio; Stefano Ventola; Roi Meir; Ori Shoval; Roman Kris; Ofer Adan; Maayan Bar-Zvi
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Paper Abstract

At 1X node, 3D FinFETS raise a number of new metrology challenges. Gate height and fin height are two of the most important parameters for process control. At present there is a metrology gap in inline in-die measurement of these parameters. In order to fill this metrology gap, in-column beam tilt has been developed and implemented on Applied Materials V4i+ top-down CD-SEM for height measurement. A low tilt (5°) beam and a high tilt (14°) beam have been calibrated to obtain two sets of images providing measurement of sidewall edge width to calculate height in the host. Evaluations are done with applications in both gate height and fin height. TEM correlation with R2 being 0.89 and precision of 0.81nm have been achieved on various in-die features in gate height application. Fin height measurement shows less accuracy (R2 being 0.77) and precision (1.49 nm) due to challenges brought by fin geometry, yet still promising as first attempt. Sensitivity to DOE offset, die-to-die and in-die variation is demonstrated in both gate height and fin height. Process defect is successfully captured from inline wafers with gate height measurement implemented in production. This is the first successful demonstration of inline in-die gate height measurement for 14nm FinFET process control.

Paper Details

Date Published: 2 April 2014
PDF: 10 pages
Proc. SPIE 9050, Metrology, Inspection, and Process Control for Microlithography XXVIII, 90500C (2 April 2014); doi: 10.1117/12.2046881
Show Author Affiliations
Xiaoxiao Zhang, GLOBALFOUNDRIES Inc. (United States)
Hua Zhou, Applied Materials, Inc. (United States)
Zhenhua Ge, Applied Materials, Inc. (United States)
Alok Vaid, GLOBALFOUNDRIES Inc. (United States)
Deepasree Konduparthi, GLOBALFOUNDRIES Inc. (United States)
Carmen Osorio, GLOBALFOUNDRIES Inc. (United States)
Stefano Ventola, Applied Materials, Inc. (United States)
Roi Meir, Applied Materials, Inc. (Israel)
Ori Shoval, Applied Materials, Inc. (Israel)
Roman Kris, Applied Materials, Inc. (Israel)
Ofer Adan, Applied Materials, Inc. (Israel)
Maayan Bar-Zvi, Applied Materials, Inc. (Israel)


Published in SPIE Proceedings Vol. 9050:
Metrology, Inspection, and Process Control for Microlithography XXVIII
Jason P. Cain; Martha I. Sanchez, Editor(s)

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