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Proceedings Paper

Novel metrology methods for fast 3D characterization of directed self-assembly (DSA) patterns for high volume manufacturing
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Paper Abstract

One of the major challenges associated with insertion of a directed self-assembly (DSA) patterning process in high volume manufacturing (HVM) is finding a non-destructive, yield-compatible, consistent critical dimension (CD) metrology process. Current CD scanning electron microscopy (CD-SEM) top-down approaches do not give the profile information for DSA patterns, which is paramount in determining the subsequent pattern transfer process (etch, for example). SEMATECH, in cooperation with some of the leaders of the metrology and DSA materials supply chain, has led an effort to address such metrology challenges in DSA. We have developed and evaluated several techniques (including a scatterometry-based method) that are potentially very attractive in determining DSA pattern profiles and have embedded bridging in such patterns without resorting to destructive cross-section imaging. We show how such processes could be fine-tuned to enable their insertion for DSA pattern characterization in an HVM environment.

Paper Details

Date Published: 2 April 2014
PDF: 10 pages
Proc. SPIE 9050, Metrology, Inspection, and Process Control for Microlithography XXVIII, 90500O (2 April 2014); doi: 10.1117/12.2046785
Show Author Affiliations
Chandra Sarma, SEMATECH Inc. (United States)
Benjamin Bunday, SEMATECH Inc. (United States)
Aron Cepler, SEMATECH Inc. (United States)
Ted Dziura, KLA-Tencor Corp. (United States)
JiHoon Kim, AZ Electronic Materials USA Corp. (United States)
Guanyang Lin, AZ Electronic Materials USA Corp. (United States)
Jian Yin, AZ Electronic Materials USA Corp. (United States)


Published in SPIE Proceedings Vol. 9050:
Metrology, Inspection, and Process Control for Microlithography XXVIII
Jason P. Cain; Martha I. Sanchez, Editor(s)

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