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Proceedings Paper

Comprehensive defect avoidance framework for mitigating EUV mask defects
Author(s): Abde Ali Kagalwalla; Puneet Gupta
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Paper Abstract

Defect avoidance methods are likely to play a key role in overcoming the challenge of mask blank defects in EUV lithography. In this work, we propose a novel EUV mask defect avoidance method. It is the first approach that allows exploring all the degrees of freedom available for defect avoidance (pattern shift, rotation and mask floorplanning). We model the defect avoidance problem as a global, non-convex optimization problem and then solve it using a combination of random walk and gradient descent. For a 8nm polysilicon layer of an ARM Cortex M0 layout, our method achieves 60% point better mask yield compared to prior art in defect avoidance for a 40-defect mask.

Paper Details

Date Published: 17 April 2014
PDF: 11 pages
Proc. SPIE 9048, Extreme Ultraviolet (EUV) Lithography V, 90480U (17 April 2014); doi: 10.1117/12.2046701
Show Author Affiliations
Abde Ali Kagalwalla, Univ. of California, Los Angeles (United States)
Puneet Gupta, Univ. of California, Los Angeles (United States)


Published in SPIE Proceedings Vol. 9048:
Extreme Ultraviolet (EUV) Lithography V
Obert R. Wood; Eric M. Panning, Editor(s)

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