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Proceedings Paper

Characterization of gallium nitride microsystems within radiation and high-temperature environments
Author(s): Heather C. Chiamori; Minmin Hou; Caitlin A. Chapin; Ashwin Shankar; Debbie G. Senesky
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Paper Abstract

New milestones in space exploration can be realized through the development of radiation-hardened, temperature-tolerant materials, sensors and electronics. This enables lightweight systems (reduced packaging requirements) with increased operation lifetimes. Gallium nitride (GaN) is a ceramic, semiconductor material that is stable within high-radiation, high-temperature and chemically corrosive environments. Recently, this material platform has been utilized to realize sensors and electronics for operation under extreme harsh conditions. These devices exploit the two-dimensional electron gas (2DEG) formed at the interface between AlGaN/GaN heterostructures, which is used as the material platform in high electron mobility transistors (HEMTs). In this paper, a review of the advancements in GaN manufacturing technology such as the growth of epitaxially deposited thin films, micromachining techniques and high-temperature metallization is presented. In addition, the compelling results of fabricating and operating micro-scale GaNbased sensors within radiation environments and at elevated temperatures are shown. The paper will close with future directions GaN-based microsystems technology for down-hole, propulsion and space exploration applications.

Paper Details

Date Published: 7 March 2014
PDF: 8 pages
Proc. SPIE 8975, Reliability, Packaging, Testing, and Characterization of MOEMS/MEMS, Nanodevices, and Nanomaterials XIII, 897507 (7 March 2014); doi: 10.1117/12.2046690
Show Author Affiliations
Heather C. Chiamori, Stanford Univ. (United States)
Minmin Hou, Stanford Univ. (United States)
Caitlin A. Chapin, Stanford Univ. (United States)
Ashwin Shankar, Stanford Univ. (United States)
Debbie G. Senesky, Stanford Univ. (United States)


Published in SPIE Proceedings Vol. 8975:
Reliability, Packaging, Testing, and Characterization of MOEMS/MEMS, Nanodevices, and Nanomaterials XIII
Herbert R. Shea; Rajeshuni Ramesham, Editor(s)

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