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Proceedings Paper

Innovative fast technique for overlay accuracy estimation using archer self calibration (ASC)
Author(s): Simon C. C. Hsu; Charlie Chen; Chun Chi Yu; Yuan Chi Pai; Eran Amit; Lipkong Yap; Tal Itzkovich; David Tien; Eros Huang; Kelly T. L. Kuo; Nuriel Amir
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Paper Abstract

As overlay margins shrink for advanced process nodes, a key overlay metrology challenge is finding the measurement conditions which optimize the yield for every device and layer. Ideally, this setup should be found in-line during the lithography measurements step. Moreover, the overlay measurement must have excellent correlation to the device electrical behavior. This requirement makes the measurement conditions selection even more challenging since it requires information about the response of both the metrology target and device to different process variations. In this work a comprehensive solution for overlay metrology accuracy, used by UMC, is described. This solution ranks the different measurement setups by their accuracy, using Qmerit, as reported by the Archer 500. This ranking was verified to match device overlay using electrical tests. Moreover, the use of Archer Self Calibration (ASC) allows further improvement of overlay measurement accuracy.

Paper Details

Date Published: 21 April 2014
PDF: 6 pages
Proc. SPIE 9050, Metrology, Inspection, and Process Control for Microlithography XXVIII, 90501N (21 April 2014); doi: 10.1117/12.2046670
Show Author Affiliations
Simon C. C. Hsu, United Microelectronics Corp. (Taiwan)
Charlie Chen, United Microelectronics Corp. (Taiwan)
Chun Chi Yu, United Microelectronics Corp. (Taiwan)
Yuan Chi Pai, United Microelectronics Corp. (Taiwan)
Eran Amit, KLA-Tencor Israel (Israel)
Lipkong Yap, KLA-Tencor Corp. (United States)
Tal Itzkovich, KLA-Tencor Israel (Israel)
David Tien, KLA-Tencor Corp. (United States)
Eros Huang, KLA-Tencor Taiwan (Taiwan)
Kelly T. L. Kuo, KLA-Tencor Taiwan (Taiwan)
Nuriel Amir, KLA-Tencor Israel (Israel)

Published in SPIE Proceedings Vol. 9050:
Metrology, Inspection, and Process Control for Microlithography XXVIII
Jason P. Cain; Martha I. Sanchez, Editor(s)

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