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Proceedings Paper

Advanced plasma sources for the future 450mm etch process
Author(s): Y. S. Lee; J. W. Lee; G. J. Park; H. Y. Chang
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Paper Abstract

In this paper, we have introduced various plasma source concepts for large-area plasma processing with a brief review of the experimental and simulation results. A multi-radio-frequency (RF) feed design, multi-electrode concepts are suggested to enhance the plasma uniformity, and, a multi-ICP source is introduced for large-area, ultra-low pressure processes to remove standing-wave and skin effects causing the processing output to be non-uniform. Using multi-feeds to connect separated electrodes in a multi-electrode is one method of uniformity control. A multi-plasma source can also be used to increase the plasma uniformity, which makes it possible to enlarge the processing area. A parallel array of the ICP sources can decrease the total impedance of the system and enable a high electron density to be achieved. We discussed the asymmetric factors including the chamber wall potential profile, stray capacitance, and gas distribution. Finally some issues regarding the control of the plasma parameters through adjustment of the excitation frequency and RF power, operating pressure, gas mixing ratio, and other external parameters to optimize large-area plasma processing are mentioned.

Paper Details

Date Published: 28 March 2014
PDF: 12 pages
Proc. SPIE 9054, Advanced Etch Technology for Nanopatterning III, 90540K (28 March 2014); doi: 10.1117/12.2046660
Show Author Affiliations
Y. S. Lee, KAIST (Korea, Republic of)
J. W. Lee, KAIST (Korea, Republic of)
G. J. Park, KAIST (Korea, Republic of)
H. Y. Chang, KAIST (Korea, Republic of)


Published in SPIE Proceedings Vol. 9054:
Advanced Etch Technology for Nanopatterning III
Gottlieb S. Oehrlein; Qinghuang Lin; Ying Zhang, Editor(s)

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