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Proceedings Paper

Scatterometry performance improvement by parameter and spectrum feed-forward
Author(s): Jie Li; Shahin Zangooie; Karthik Boinapally; Xi Zou; Jiangtao Hu; Zhuan Liu; Sanjay Yedur; Peter Wilkens; Avraham Ver; Robert Cohen; Babak Khamsepour
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Paper Abstract

Optical critical dimension (OCD) metrology using scatterometry has been widely adopted for fast and non-destructive in-line process control and yield improvement. Recently there has been increased interest in metrology performance enhancement through a holistic approach. We investigate the benefits of feed-forward of metrology information from prior process steps using samples from magnetic hard disk drive manufacturing. The scatterometry targets are composed of rather isolated gratings that are designed to have better correlation with device features. Two gratings, one with pitch ≈ 10CD, and the other with pitch ≈ 15CD, are measured at post develop and post reactive ion etch (RIE) steps. Two methods: parameter feed-forward (PFF) and spectrum feedforward (SFF) are studied in which the measurement results or spectrum collected on the blanket target at photo step are fed forward to the measurements on the grating structures at post develop or post RIE step. Compared with standard measurement without FF, for the more isolated grating at photo step, both PFF and SFF improve CD correlation from R2=0.96 to R2=0.975 using CD-SEM results measured on device as the reference. Dynamic precision and fleet measurement precision are improved by 20-60%. For post RIE step, PFF and SFF significantly improve CD correlation from R2=0.95, slope=1.09 to R2=0.975, slope=1.03 for the denser grating, and from R2=0.90, slope=0.79 to R2=0.96, slope=0.96 for the more isolated grating. Dynamic precision is generally improved by 20-40%. It is observed that both PFF and SFF are equally efficient in reducing parameter correlation for the application studied here.

Paper Details

Date Published: 2 April 2014
PDF: 8 pages
Proc. SPIE 9050, Metrology, Inspection, and Process Control for Microlithography XXVIII, 90502T (2 April 2014); doi: 10.1117/12.2046639
Show Author Affiliations
Jie Li, Nanometrics Inc. (United States)
Shahin Zangooie, HGST, Inc. (United States)
Karthik Boinapally, Nanometrics Inc. (United States)
Xi Zou, Nanometrics Inc. (United States)
Jiangtao Hu, Nanometrics Inc. (United States)
Zhuan Liu, Nanometrics Inc. (United States)
Sanjay Yedur, Nanometrics Inc. (United States)
Peter Wilkens, HGST, Inc. (United States)
Avraham Ver, HGST, Inc. (United States)
Robert Cohen, HGST, Inc. (United States)
Babak Khamsepour, HGST, Inc. (United States)


Published in SPIE Proceedings Vol. 9050:
Metrology, Inspection, and Process Control for Microlithography XXVIII
Jason P. Cain; Martha I. Sanchez, Editor(s)

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