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Proceedings Paper

Predicting LER PSD caused by mask roughness using a mathematical model
Author(s): Rene A. Claus; Andrew R. Neureuther; Laura Waller; Patrick P. Naulleau
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Paper Abstract

EUV masks have replicated multilayer roughness from the substrate or the deposition process which cause line edge roughness (LER) during imaging. We have developed a model, based on the assumption that the roughness is small, that is able to analytically calculate the LER and LER Power Spectral Density (PSD) for any illumination source, defocus, and pitch. We evaluated the model for typical mask roughness values and varied illumination and other parameters to determine how the roughness induced LER behaves under different imaging conditions.

Paper Details

Date Published: 17 April 2014
PDF: 12 pages
Proc. SPIE 9048, Extreme Ultraviolet (EUV) Lithography V, 90482X (17 April 2014); doi: 10.1117/12.2046637
Show Author Affiliations
Rene A. Claus, Univ. of California, Berkeley (United States)
Andrew R. Neureuther, Univ. of California, Berkeley (United States)
Laura Waller, Univ. of California, Berkeley (United States)
Patrick P. Naulleau, Lawrence Berkeley National Lab. (United States)

Published in SPIE Proceedings Vol. 9048:
Extreme Ultraviolet (EUV) Lithography V
Obert R. Wood; Eric M. Panning, Editor(s)

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