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Proceedings Paper

Electron and hole transfer in anion-bound chemically amplified resists used in extreme ultraviolet lithography
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Paper Abstract

The uniformity of acid generator distribution and the length of acid diffusion are serious problems in the development of resist materials used for the 16nm node and below. Anion-bound polymers in which the anion part of onium salts is polymerized have attracted much attention for solving these problems. In this study, the reaction mechanism of an anion-bound polymer in cyclohexanone was clarified using pulse radiolysis. The design of an efficient electron and hole transfer system is essential to the enhancement of resist performance.

Paper Details

Date Published: 17 April 2014
PDF: 8 pages
Proc. SPIE 9048, Extreme Ultraviolet (EUV) Lithography V, 90481F (17 April 2014); doi: 10.1117/12.2046627
Show Author Affiliations
Yoshitaka Komuro, Osaka Univ. (Japan)
Tokyo Ohka Kogyo Co., Ltd. (Japan)
Hiroki Yamamoto, Osaka Univ. (Japan)
Yoshiyuki Utsumi, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Katsumi Ohmori, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Takahiro Kozawa, Osaka Univ. (Japan)


Published in SPIE Proceedings Vol. 9048:
Extreme Ultraviolet (EUV) Lithography V
Obert R. Wood; Eric M. Panning, Editor(s)

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