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Proceedings Paper

Aerial image deformation caused by various defects of EUV pellicles
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Paper Abstract

The Critical Dimension (CD) uniformity due to the defect on the Extreme-Ultraviolet (EUV) pellicle is reported. Based on computational simulation of the aerial images for different defect size on the wafer, it is found that the size of the defect should be smaller than 2 μm for the CD uniformity of 0.1 nm. The aerial image for the different defect materials, sulfur and ruthenium, are also simulated showing that the CD uniformity does not have a noticeable dependence on the different defect materials. However, the CD uniformity is worsened with the mesh structure due to its shadow and the much smaller defects size, less than 2 μm, can be allowed.

Paper Details

Date Published: 17 April 2014
PDF: 9 pages
Proc. SPIE 9048, Extreme Ultraviolet (EUV) Lithography V, 90482V (17 April 2014); doi: 10.1117/12.2046623
Show Author Affiliations
Sung-Gyu Lee, Hanyang Univ. (Korea, Republic of)
Michael Yeung, Fastlitho Inc. (United States)
Eytan Barouch, Boston Univ. (United States)
Mun-Ja Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Seong-Sue Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Hye-Keun Oh, Hanyang Univ. (Korea, Republic of)

Published in SPIE Proceedings Vol. 9048:
Extreme Ultraviolet (EUV) Lithography V
Obert R. Wood; Eric M. Panning, Editor(s)

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