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Proceedings Paper

Resist outgassing contamination on EUV multilayer mirror analogues
Author(s): Diego Alvarado; Yudhishthir Kandel; Jaewoong Sohn; Tonmoy Chakraborty; Dominic Ashworth; Gregory Denbeaux
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Paper Abstract

EUV lithography is a technology enabling next generation electronic devices, but issues with photoresist sensitivity, resolution and line edge roughness as well as tool downtime and throughput remain. As part of the industry's efforts to address these problems we have worked with resist suppliers to quantify the relative contamination rate of a variety of resists on EUV multilayer mirror analogues following ASML approved protocols. Here we present results of our ongoing program to better understand the effect of process parameters such as dose and resist thickness on the contamination rate of ruthenium coated witness plates, additionally we present results from a study on the effectiveness of hydrogen cleaning.

Paper Details

Date Published: 17 April 2014
PDF: 6 pages
Proc. SPIE 9048, Extreme Ultraviolet (EUV) Lithography V, 90481A (17 April 2014); doi: 10.1117/12.2046613
Show Author Affiliations
Diego Alvarado, SUNY College of Nanoscale Science and Engineering (United States)
Yudhishthir Kandel, SUNY College of Nanoscale Science and Engineering (United States)
Jaewoong Sohn, SEMATECH Inc. (United States)
Tonmoy Chakraborty, SEMATECH Inc. (United States)
Dominic Ashworth, SEMATECH Inc. (United States)
Gregory Denbeaux, SUNY College of Nanoscale Science and Engineering (United States)

Published in SPIE Proceedings Vol. 9048:
Extreme Ultraviolet (EUV) Lithography V
Obert R. Wood; Eric M. Panning, Editor(s)

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