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Proceedings Paper

Patterning chemistry of HafSOx resist
Author(s): Jenn M. Amador; Shawn R. Decker; Stefan E. Lucchini; Rose E. Ruther; Douglas A. Keszler
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Paper Abstract

A combination of ICP-OES, titration, and Raman spectroscopy was used to determine the ratio of peroxide to hafnium in the inorganic photoresist HafSOx. By using ICP-OES to determine the hafnium concentration and titration with permanganate to determine peroxide in a solution of dissolved films, the Hf:O22- ratio was found to be approximately 2:1 in the films. From Raman measurements on precursor solutions, it was determined that that Hfbound peroxide saturated at this level. Film insolubility is induced through loss of approximately 75% of bound peroxide following exposure to a 30-keV electron beam.

Paper Details

Date Published: 27 March 2014
PDF: 6 pages
Proc. SPIE 9051, Advances in Patterning Materials and Processes XXXI, 90511A (27 March 2014); doi: 10.1117/12.2046605
Show Author Affiliations
Jenn M. Amador, Oregon State Univ. (United States)
Shawn R. Decker, Oregon State Univ. (United States)
Stefan E. Lucchini, Oregon State Univ. (United States)
Rose E. Ruther, Oregon State Univ. (United States)
Douglas A. Keszler, Oregon State Univ. (United States)


Published in SPIE Proceedings Vol. 9051:
Advances in Patterning Materials and Processes XXXI
Thomas I. Wallow; Christoph K. Hohle, Editor(s)

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