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Proceedings Paper

Immersion lithography extension to sub-10nm nodes with multiple patterning
Author(s): Soichi Owa; Shinji Wakamoto; Masayuki Murayama; Hidetami Yaegashi; Kenichi Oyama
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Paper Abstract

This paper investigates the possibility of 193 nm immersion lithography extensions to sub-10 nm technology nodes using the patterning scheme of unidirectional (1D) grating lines and cuttings. Technological feasibility down to 5 nm nodes is examined with experimental data of self-aligned multiple patterning method (SAxP) and Litho-Etch (LE) cuttings. For the cutting by LE repetition, relationship between node definition and the repetition number n (LE^n) is discussed. Cost is evaluated for SADP, SAQP and SAOP to generate unidirectional grating formation, and the following LE^n cutting process. Finally, schemes of gridded cutting and trim are introduced, and found to be advantageous to keep the scaling merit of transistor cost at 7 and 5 nm technology nodes.

Paper Details

Date Published: 31 March 2014
PDF: 9 pages
Proc. SPIE 9052, Optical Microlithography XXVII, 90520O (31 March 2014); doi: 10.1117/12.2046604
Show Author Affiliations
Soichi Owa, Nikon Corp. (Japan)
Shinji Wakamoto, Nikon Corp. (Japan)
Masayuki Murayama, Nikon Corp. (Japan)
Hidetami Yaegashi, Tokyo Electron Ltd. (Japan)
Kenichi Oyama, Tokyo Electron Ltd. (Japan)


Published in SPIE Proceedings Vol. 9052:
Optical Microlithography XXVII
Kafai Lai; Andreas Erdmann, Editor(s)

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