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Proceedings Paper

Study on resist performance of chemically amplified molecular resist based on noria derivative and calixarene derivative
Author(s): Hiroki Yamamoto; Hiroto Kudo; Takahiro Kozawa
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Paper Abstract

Novel resist materials are required for lithographic processing with ionization radiation such as extreme ultraviolet (EUV) and electron beam (EB) exposure tool. In this study, we developed positive-tone chemically amplified molecular resists based on noria derivatives and calixarene derivatives and evaluated the lithographic performance using EUV and EB. We make clear that a small change in modification of noria resists can cause a significant change of sensitivity. Especially, it is useful for the improvement of resist sensitivities to use protecting groups such as 2-acetyloxy-2-methyladamantyl ester (AD) groups and ethoxy groups. Also, novel calixarene derivative such as pillar[5]arene protected by AD showed a semi-isolated pattern with the line width of 40 nm (pitch: 100nm). Noria derivatives and calixarene derivative resists were promising candidates because of high sensitivity, high resolution and etch durability similar to conventional resist such as ZEP 520A and UVIII.

Paper Details

Date Published: 27 March 2014
PDF: 9 pages
Proc. SPIE 9051, Advances in Patterning Materials and Processes XXXI, 90511Z (27 March 2014); doi: 10.1117/12.2046595
Show Author Affiliations
Hiroki Yamamoto, Osaka Univ. (Japan)
Hiroto Kudo, Kansai Univ. (Japan)
Takahiro Kozawa, Osaka Univ. (Japan)

Published in SPIE Proceedings Vol. 9051:
Advances in Patterning Materials and Processes XXXI
Thomas I. Wallow; Christoph K. Hohle, Editor(s)

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