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Proceedings Paper

EUV resists based on tin-oxo clusters
Author(s): Brian Cardineau; Ryan Del Re; Hashim Al-Mashat; Miles Marnell; Michaela Vockenhuber; Yasin Ekinci; Chandra Sarma; Mark Neisser; Daniel A. Freedman; Robert L. Brainard
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Paper Abstract

We have studied the photolysis of tin clusters of the type [(RSn)12O14(OH)6] X2 using extreme ultraviolet (EUV, 13.5 nm) light, and developed these clusters into novel high-resolution photoresists. A thin film of [(BuSn)12O14(OH)6][p-toluenesulfonate]2 (1) was prepared by spin coating a solution of (1) in 2-butanone onto a silicon wafer. Exposure to EUV light caused the compound (1) to be converted into a substance that was markedly less soluble in aqueous isopropanol. To optimize the EUV lithographic performance of resists using tin-oxo clusters, and to gain insight into the mechanism of their photochemical reactions, we prepared several compounds based on [(RSn)12O14(OH)6] X2. The sensitivity of tin-oxide films to EUV light were studied as a function of variations in the structure of the counter-anions (X, primarily carboxylates) and organic ligands bound to tin (R). Correlations were sought between the EUV sensitivity of these complexes vs. the strength of the carbon-carboxylate bonds in the counteranions and vs. the strength of the carbon-tin bonds. No correlation was observed between the strength of the carboncarboxylate bonds in the counter-anions (X) and the EUV photosensitivity. However, the EUV sensitivity of the tinoxide films appears to be well-correlated with the strength of the carbon-tin bonds. We hypothesize this correlation indicates a mechanism of carbon-tin bond homolysis during exposure. Using these tin clusters, 18-nm lines were printed showcasing the high resolution capabilities of these materials as photoresists for EUV lithography.

Paper Details

Date Published: 4 April 2014
PDF: 12 pages
Proc. SPIE 9051, Advances in Patterning Materials and Processes XXXI, 90511B (4 April 2014); doi: 10.1117/12.2046536
Show Author Affiliations
Brian Cardineau, SUNY College of Nanoscale Science and Engineering (United States)
Ryan Del Re, SUNY College of Nanoscale Science and Engineering (United States)
Hashim Al-Mashat, State Univ. of New York at New Paltz (United States)
Miles Marnell, State Univ. of New York at New Paltz (United States)
Michaela Vockenhuber, Paul Scherrer Institut (Switzerland)
Yasin Ekinci, Paul Scherrer Institut (Switzerland)
Chandra Sarma, SEMATECH Inc. (United States)
Mark Neisser, SEMATECH Inc. (United States)
Daniel A. Freedman, State Univ. of New York at New Paltz (United States)
Robert L. Brainard, SUNY College of Nanoscale Science and Engineering (United States)


Published in SPIE Proceedings Vol. 9051:
Advances in Patterning Materials and Processes XXXI
Thomas I. Wallow; Christoph K. Hohle, Editor(s)

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