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Proceedings Paper

Accurate contour extraction from mask SEM image
Author(s): Izumi Santo; Akira Higuchi; Mirai Anazawa; Hideaki Bandoh
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Paper Abstract

Contour extraction of complicated optical proximity correction (OPC) patterns for advanced photomasks is increasingly needed in addition to the conventional mask CD measurement. The lithography simulation based on contour extraction from the SEM images on photomasks is one of the efficient methods to assure adequacy of OPC patterns. In this paper, the function of the above-mentioned contour extraction, and the performance requirements for the CD-SEM for this function using Mask CD-SEM 'Z7', the latest product of HOLON, and the scheme to correct the distortion are explained. Furthermore, the perspectives of the application of our contour extraction method are outlined.

Paper Details

Date Published: 2 April 2014
PDF: 11 pages
Proc. SPIE 9050, Metrology, Inspection, and Process Control for Microlithography XXVIII, 90502M (2 April 2014); doi: 10.1117/12.2046530
Show Author Affiliations
Izumi Santo, Holon Corp. (Japan)
Akira Higuchi, Holon Corp. (Japan)
Mirai Anazawa, Holon Corp. (Japan)
Hideaki Bandoh, Holon Corp. (Japan)

Published in SPIE Proceedings Vol. 9050:
Metrology, Inspection, and Process Control for Microlithography XXVIII
Jason P. Cain; Martha I. Sanchez, Editor(s)

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