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Proceedings Paper

Experimental validation of rigorous, 3D profile models for negative-tone develop resists
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Paper Abstract

The extension of 193nm immersion lithography to the 14nm node and beyond directly encounters a significant reduction in image quality. One of the consequences is that the resist profile varies noticeably, impacting the already limited process window. Resist top-loss, top-rounding, T-top and footing all play significant roles in the subsequent etch process. Therefore, a reliable rigorous model with the capability to correctly predict resist 3D (R3D) profiles is acquiring higher importance. In this paper, we will present a calibrated rigorous model of a negative-tone develop resist. Resist profiles can be well simulated through focus and dose, and cases that match well to the experimental wafer data are validated. Such a model can not only provide early investigation of insights into process limitation and optimization, but can also complement existing OPC models to become R3D-aware in process development.

Paper Details

Date Published: 31 March 2014
PDF: 10 pages
Proc. SPIE 9052, Optical Microlithography XXVII, 90520C (31 March 2014); doi: 10.1117/12.2046522
Show Author Affiliations
Weimin Gao, Synopsys, Inc. (Belgium)
IMEC (Belgium)
Ulrich Klostermann, Synopsys GmbH (Germany)
Itaru Kamohara, Synopsys GmbH (Germany)
Thomas Schmoeller, Synopsys GmbH (Germany)
Kevin Lucas, Synopsys, Inc. (United States)
Wolfgang Demmerle, Synopsys GmbH (Germany)
Peter De Bisschop, IMEC (Belgium)
Julien Mailfert, IMEC (Belgium)
Katholieke Univ. Leuven (Belgium)


Published in SPIE Proceedings Vol. 9052:
Optical Microlithography XXVII
Kafai Lai; Andreas Erdmann, Editor(s)

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