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Proceedings Paper

Towards electrical testable SOI devices using Directed Self-Assembly for fin formation
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Paper Abstract

The first fully integrated SOI device using 42nm-pitch directed self-assembly (DSA) process for fin formation has been demonstrated in a 300mm pilot line environment. Two major issues were observed and resolved in the fin formation process. The cause of the issues and process optimization are discussed. The DSA device shows comparable yield with slight short channel degradation which is a result of a large fin CD when compared to the devices made by baseline process. LER/LWR analysis through the DSA process implied that the 42nm-pitch DSA process may not have reached the thermodynamic equilibrium. Here, we also show preliminary results from using scatterometry to detect DSA defects before removing one of the blocks in BCP.

Paper Details

Date Published: 28 March 2014
PDF: 12 pages
Proc. SPIE 9049, Alternative Lithographic Technologies VI, 904909 (28 March 2014); doi: 10.1117/12.2046462
Show Author Affiliations
Chi-Chun Liu, IBM Corp. (United States)
Cristina Estrada-Raygoza, IBM Corp. (United States)
Hong He, IBM Corp. (United States)
Michael Cicoria, TEL Technology Ctr., America, LLC (United States)
Vinayak Rastogi, TEL Technology Ctr., America, LLC (United States)
Nihar Mohanty, TEL Technology Ctr., America, LLC (United States)
Hsinyu Tsai, IBM Thomas J. Watson Research Ctr. (United States)
Anthony Schepis, IBM Corp. (United States)
Kafai Lai, IBM SRDC (United States)
Robin Chao, IBM Corp. (United States)
Derrick Liu, IBM Corp. (United States)
Michael Guillorn, IBM Thomas J. Watson Research Ctr. (United States)
Jason Cantone, GLOBALFOUNDRIES Inc. (United States)
Sylvie Mignot, GLOBALFOUNDRIES Inc. (United States)
Ryoung-Han Kim, GLOBALFOUNDRIES Inc. (United States)
Joy Cheng, IBM Almaden Research Ctr. (United States)
Melia Tjio, IBM Almaden Research Ctr. (United States)
Akiteru Ko, TEL Technology Ctr., America, LLC (United States)
David Hetzer, TEL Technology Ctr., America, LLC (United States)
Mark Somervell, Tokyo Electron America, Inc. (United States)
Matthew Colburn, IBM Corp. (United States)


Published in SPIE Proceedings Vol. 9049:
Alternative Lithographic Technologies VI
Douglas J. Resnick; Christopher Bencher, Editor(s)

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