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Proceedings Paper

9nm node wafer defect inspection using visible light
Author(s): Renjie Zhou; Chris Edwards; Gabriel Popescu; Lynford L. Goddard
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Paper Abstract

Over the past 2 years, we have developed a common optical-path, 532 nm laser epi-illumination diffraction phase microscope (epi-DPM) and successfully applied it to detect different types of defects down to 20 by 100 nm in a 22nm node intentional defect array (IDA) wafer. An image post-processing method called 2DISC, using image frame 2nd order differential, image stitching, and convolution, was used to significantly improve sensitivity of the measured images. To address 9nm node IDA wafer inspection, we updated our system with a highly stable 405 nm diode laser. By using the 2DISC method, we detected parallel bridge defects in the 9nm node wafer. To further enhance detectability, we are exploring 3D wafer scanning, white-light illumination, and dark-field inspection.

Paper Details

Date Published: 2 April 2014
PDF: 7 pages
Proc. SPIE 9050, Metrology, Inspection, and Process Control for Microlithography XXVIII, 905017 (2 April 2014); doi: 10.1117/12.2046451
Show Author Affiliations
Renjie Zhou, Univ. of Illinois at Urbana-Champaign (United States)
Chris Edwards, Univ. of Illinois at Urbana-Champaign (United States)
Gabriel Popescu, Univ. of Illinois at Urbana-Champaign (United States)
Lynford L. Goddard, Univ. of Illinois at Urbana-Champaign (United States)


Published in SPIE Proceedings Vol. 9050:
Metrology, Inspection, and Process Control for Microlithography XXVIII
Jason P. Cain; Martha I. Sanchez, Editor(s)

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