Share Email Print

Proceedings Paper

A shape-modification strategy of electron-beam direct writing considering circuit performance in LSI interconnects
Author(s): Yoshihiro Midoh; Atsushi Osaki; Koji Nakamae
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

As the feature size of LSI shrinks, the cost of mask manufacturing and turn-around-time continue to increase. Maskless lithography using electron beam direct writing (EBDW) technology attracts attention. On the other hands, with continuous scaling and the introduction of low-k dielectrics in Cu interconnect technology, reliability degradation caused by time-dependent dielectric breakdown (TDDB) and electromigration has become important issues. Therefore, EBDW in backend process is needed to ensure superior patterning quality and reliability using high-accuracy proximity effect correction (PEC). We have already proposed a dose-modification strategy of EBDW considering reliability for TDDB degradation. In this paper, furthermore, we propose a shape-modification strategy of EBDW considering circuit performance in LSI interconnects for improving EB drawing throughput. We use effectively patterns with rounded corner in order to reduce EB shots increased by PEC and avoid the local high current density at the corner of metal lines. We applied the proposed method to a microprocessor layout synthesized with the Nangate 45nm Open Cell Library. As a result, the drawn pattern by corner rounding and coarse dose adjustment achieved 2.5% higher throughput than that by no corner rounding and fine dose adjustment.

Paper Details

Date Published: 28 March 2014
PDF: 10 pages
Proc. SPIE 9049, Alternative Lithographic Technologies VI, 90491Z (28 March 2014); doi: 10.1117/12.2046336
Show Author Affiliations
Yoshihiro Midoh, Osaka Univ. (Japan)
Atsushi Osaki, Osaka Univ. (Japan)
Koji Nakamae, Osaka Univ. (Japan)

Published in SPIE Proceedings Vol. 9049:
Alternative Lithographic Technologies VI
Douglas J. Resnick; Christopher Bencher, Editor(s)

© SPIE. Terms of Use
Back to Top