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Proceedings Paper

New materials for directed self-assembly for advanced patterning
Author(s): Jieqian Zhang; Janet Wu; Mingqi Li; Valeriy V. Ginzburg; Jeffrey D. Weinhold; Michael B. Clark; Peter Trefonas; Phillip D. Hustad
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Paper Abstract

Directed Self-Assembly (DSA) of block copolymers is a candidate advanced patterning technology at future technology nodes. Although DSA promises resolution and cost benefits, a number of constraints and challenges remain for its implementation. Poly(styrene-block-methyl methacrylate) (PS-b-PMMA) has been widely studied in DSA and applied in various applications to demonstrate the potential of DSA to extend optical lithography, including line space and contact hole patterning and uniformity repair,. However, the relatively weak segregation strength of PS-b-PMMA limits its capability to pattern sub-10 nm features. This paper presents the use of strongly segregated high X block copolymers to enable sub-10 nm patterning. Chemoepitaxy DSA with high X lamellar block copolymers is demonstrated with two different strategies based on thermal annealing process and no top coat. These technologies hold promise to enable the implementation of DSA at future technology nodes.

Paper Details

Date Published: 27 March 2014
PDF: 10 pages
Proc. SPIE 9051, Advances in Patterning Materials and Processes XXXI, 905111 (27 March 2014); doi: 10.1117/12.2046328
Show Author Affiliations
Jieqian Zhang, Dow Electronic Materials (United States)
Janet Wu, Dow Electronic Materials (United States)
Mingqi Li, Dow Electronic Materials (United States)
Valeriy V. Ginzburg, The Dow Chemical Co. (United States)
Jeffrey D. Weinhold, The Dow Chemical Co. (United States)
Michael B. Clark, The Dow Chemical Co. (United States)
Peter Trefonas, Dow Electronic Materials (United States)
Phillip D. Hustad, Dow Electronic Materials (United States)

Published in SPIE Proceedings Vol. 9051:
Advances in Patterning Materials and Processes XXXI
Thomas I. Wallow; Christoph K. Hohle, Editor(s)

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