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Proceedings Paper

Development of spin-on-carbon hard mask for advanced node
Author(s): Takanori Kudo; M. Dalil Rahman; Douglas McKenzie; Clement Anyadiegwu; Sandra Doerrenbaecher; Wolfgang Zahn; Munirathna Padmanaban
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Paper Abstract

Spin-on-carbon (SOC) hard mask is useful for multilayer lithography process because of its high etch resistance, low cost of ownership, low defectivity, high alignment accuracy, good gap filling and planarization for topography. SOC is a high carbon containing polymer solution and as a coating material, the polymers need to be soluble in organic solvent and insoluble after curing for coating upper layer materials. High carbon content (>80%) of SOC is very important for good etch resistance. As the semiconductor industry is moving to 2X nm node and beyond, further improvement of SOC properties mentioned above is required to achieve higher resolution. We synthesized a series of novel monomers and high carbon polymers applicable for SOC applications of advanced nodes. The optimized SOC was a PGMEA based formulation, had high carbon content 90%, excellent filling/leveling properties, and adequate etching properties applicable to trilayer process. The SOC successfully transferred patterns from resist into substrate and the SOC patterns did not show deformation or wiggling down to CD 40nm. This paper describes some of the SOC polymer chemistry and the performance of an optimized SOC formulation.

Paper Details

Date Published: 27 March 2014
PDF: 8 pages
Proc. SPIE 9051, Advances in Patterning Materials and Processes XXXI, 90511X (27 March 2014); doi: 10.1117/12.2046293
Show Author Affiliations
Takanori Kudo, AZ Electronic Materials USA Corp. (United States)
M. Dalil Rahman, AZ Electronic Materials USA Corp. (United States)
Douglas McKenzie, AZ Electronic Materials USA Corp. (United States)
Clement Anyadiegwu, AZ Electronic Materials USA Corp. (United States)
Sandra Doerrenbaecher, AZ Electronic Materials Germany GmbH (Germany)
Wolfgang Zahn, AZ Electronic Materials Germany GmbH (Germany)
Munirathna Padmanaban, AZ Electronic Materials USA Corp. (United States)


Published in SPIE Proceedings Vol. 9051:
Advances in Patterning Materials and Processes XXXI
Thomas I. Wallow; Christoph K. Hohle, Editor(s)

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