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Proceedings Paper

Challenges for pattern formation with sub-100nm residual-layer thickness by roll-to-roll nanoimprint lithography
Author(s): Ryoichi Inanami; Kazuto Matsuki; Tomoko Ojima; Takuya Kono; Tetsuro Nakasugi
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Paper Abstract

Technologies for pattern fabrication on a flexible substrate are being developed for various flexible devices. A patterning technique for a smaller pattern of the order of sub-100 nm will be needed in the near future. Roll-to-roll Nano-Imprint Lithography (RtR-NIL) is a promising candidate for extremely low-cost fabrication of large-area devices in large volumes. A residual layer thickness (RLT) of a pattern transferred by RtR-NIL distributes at around several micrometers or more. We tried to thin the RLT below 100 nm and confirmed the controllability of the RLT and its deviation in the patterned sample.

Paper Details

Date Published: 28 March 2014
PDF: 9 pages
Proc. SPIE 9049, Alternative Lithographic Technologies VI, 90490I (28 March 2014); doi: 10.1117/12.2046248
Show Author Affiliations
Ryoichi Inanami, Toshiba Corp. (Japan)
Kazuto Matsuki, Toshiba Corp. (Japan)
Tomoko Ojima, Toshiba Corp. (Japan)
Takuya Kono, Toshiba Corp. (Japan)
Tetsuro Nakasugi, Toshiba Corp. (Japan)

Published in SPIE Proceedings Vol. 9049:
Alternative Lithographic Technologies VI
Douglas J. Resnick; Christopher Bencher, Editor(s)

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