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Proceedings Paper

A generalized model to predict fin-width roughness induced FinFET device variability using the boundary perturbation method
Author(s): Qi Cheng; Jun You; Yijian Chen
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Paper Abstract

In this paper, a generalized model to predict fin-width roughness (FWR) induced FinFET device variability is developed using the boundary perturbation method. An analytic solution to Poisson’s equation with a perturbed boundary is derived to describe the FWR effects on the sub-threshold electric potential and drain current. High model accuracy under various device operating conditions is demonstrated by a detailed comparison with TCAD simulations. The correlation among the threshold-voltage shift, dominant fin-roughness frequency, and phase difference (between two dominant fin-edge roughness functions) is identified. It is found that a periodic fluctuation of the threshold voltage can be induced by the phase difference, while more significant variations are observed at lower frequencies. Our study also shows that thinner gate oxide and wider fins will help to reduce the FWR effects.

Paper Details

Date Published: 28 March 2014
PDF: 10 pages
Proc. SPIE 9053, Design-Process-Technology Co-optimization for Manufacturability VIII, 90530U (28 March 2014); doi: 10.1117/12.2046221
Show Author Affiliations
Qi Cheng, Peking Univ. (China)
Jun You, Peking Univ. (China)
Yijian Chen, Peking Univ. (China)


Published in SPIE Proceedings Vol. 9053:
Design-Process-Technology Co-optimization for Manufacturability VIII
John L. Sturtevant; Luigi Capodieci, Editor(s)

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