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Proceedings Paper

Innovative solutions on 193 immersion-based self-aligned multiple patterning
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Paper Abstract

EUV lithography is one of the most promising techniques for sub-20nm half-pitch HVM devices, however it is well known that EUVL solutions still face significant challenges. Therefore we have focused on 193 immersion extension by using a self-aligned multiple patterning (SAMP), and this technique easily enables fine periodical patterning. Spacer patterning techniques have already been applied to sub-20nm hp advanced devices. In general, SAMP consists of SADP, SATP, SAQP, etc. We have already introduced about evolutional schemes and cost effective processes in past SPIE sessions.[1-12] SAQP enable further down-scaling to 10nm hp from SADP levels, however we must consider next advanced solution for sub-10nm hp resolution. In this paper, we will discuss about a possibility of 193 immersion extension using SAOP (self-aligned octuple patterning).

Paper Details

Date Published: 27 March 2014
PDF: 6 pages
Proc. SPIE 9051, Advances in Patterning Materials and Processes XXXI, 90511E (27 March 2014); doi: 10.1117/12.2046220
Show Author Affiliations
Sakurako Natori, Tokyo Electron Ltd. (Japan)
Shohei Yamauchi, Tokyo Electron Ltd. (Japan)
Arisa Hara, Tokyo Electron Ltd. (Japan)
Masatoshi Yamato, Tokyo Electron Ltd. (Japan)
Kenichi Oyama, Tokyo Electron Ltd. (Japan)
Hidetami Yaegashi, Tokyo Electron Ltd. (Japan)

Published in SPIE Proceedings Vol. 9051:
Advances in Patterning Materials and Processes XXXI
Thomas I. Wallow; Christoph K. Hohle, Editor(s)

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